Calibration of a Mobility Model for Quartermicron Cmos Devices
نویسندگان
چکیده
We present the calibration of a mobility model for a 0.25μm CMOS technology using response surface methodology. For this process several measurements for different gate lengths (0.2μm 4.0μm) were made. Care was taken to eliminate the statistical variations typical to sub-micron devices by measuring several chips on the the same wafer and taking an average sample.
منابع مشابه
Device Simulator Calibration for Quartermicron CMOS Devices
We present the calibration of a device simulator for a 0.25 ftm CMOS technology using response surface methodology. For this process several measurements for different gate lengths (0.2-4.0 /jm) were made. Care was taken to eliminate the statistical variations typical to sub-micron devices by measuring several chips on the the same wafer and taking an average sample. The simulations carried out...
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